Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.
Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The ...
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2017
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.7b16670